Damascene conductive line for contacting an underlying...

Details Damascene conductive line for contacting an underlying... Damascene conductive line for contacting an underlying...

2008-06-06

2010-06-01

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257SE31029

Reexamination Certificate

active

07728352

ABSTRACT:
A damascene approach may be utilized to form an electrode to a lower conductive line in a phase change memory. The phase change memory may be formed of a plurality of isolated memory cells, each including a phase change memory threshold switch and a phase change memory storage element.

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Japanese Patent Office, English Translation of Office Action issued in corresponding Japanese Application No. 2006-522570, 9 pages, Nov. 24, 2009.

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