Damascene conductive line for contacting an underlying...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257SE31029

Reexamination Certificate

active

10633886

ABSTRACT:
A damascene approach may be utilized to form an electrode to a lower conductive line in a phase change memory. The phase change memory may be formed of a plurality of isolated memory cells, each including a phase change memory threshold switch and a phase change memory storage element.

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