Damage thresholds of p-n junction devices by a current pulse met

Details Damage thresholds of p-n junction devices by a current pulse met Damage thresholds of p-n junction devices by a current pulse met

1975-02-07

1976-08-31

Rolinec, R. V.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, G01R 3122

Patent

active

039784053

ABSTRACT:
An improvement of the Wunsch test method for measuring pulsed-power failure thresholds of bipolar transistors and p-n junction diodes using short-pulse testing with pulse durations of 100 nanoseconds or less. A square pulse of reverse current is used to damage the p-n junction of interest, and the absorbed power is computed from oscilloscope traces of voltage and current. A constant-current pulse is used rather than the constant power pulse of the Wunsch test method, thereby limiting the damage done to the device and permitting a wide range of device parameter to be observed. The degree of device degradation is utilized to distinguish between true and false measurements of thresholddamage input-power and also to ensure that the individual failure levels of specimens of a sample actually are threshold failure levels rather than overkill levels, in order that the average of these levels represents, approximately, a 50% probability of failure for the sample. The current-pulse method simplifies the pulse-test procedures and produces damage threshold data which is many times more accurate than that which has been produced by previous methods.

REFERENCES:
schiff, P.; "Preventing Second Breakdown . . . ;" Electronics; June 15, 1; pp. 66-74.

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