D.C. biassing of MESFETs to prevent oscillation during power sup

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307200B, 307297, 307491, 307363, 307544, 307591, 361 86, 361 92, G01R 19165

Patent

active

046058664

ABSTRACT:
Current in the drain-source path of a microwave high-power GaAs MESFET is controlled by a regulating circuit including an integrating differential amplifier whose output controls the gate of the MESFET. One input of the differential amplifier is supplied with a fraction of the supply voltage, and the other is supplied with a voltage dependent upon the current to be controlled. During switch-on and switch-off of the supply voltage, the risk of Gunn effect oscillation of the MESFET is avoided by a switching circuit which controls the differential amplifier to maintain substantially zero drain-source current when the supply voltage is below a predetermined level less than its nominal level.

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patent: 4428020 (1984-01-01), Blanchard, Jr.
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patent: 4449067 (1984-05-01), Nishikawa
patent: 4493000 (1985-01-01), Edwards
patent: 4510549 (1985-04-01), Tedesco

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