Czochralski method using a member for intercepting radiation fro

Details Czochralski method using a member for intercepting radiation fro Czochralski method using a member for intercepting radiation fro

1994-01-14

1995-07-04

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 17, 117213, C30B 1510

Patent

active

054290678

ABSTRACT:
A Czochralski method using radiation intercepting members (1, 9) is used for manufacturing a single crystal such as compound semiconductors with a high production yield using a material having a low thermal conductivity or with a small temperature gradient in the pulling direction. In this method, a coracle (6) having an opening is provided in a melt contained in a crucible (3). A first member (1) is positioned on the coracle (6) to intercept heat radiation from the melt. A second member (9) supported by a crystal pulling shaft (8) is positioned on the first member (1) to cover an opening formed at the center of the first member (1). Seeding is performed while heat loss is limited by intercepting the radiation with the first and the second members. After the seeding, a shoulder portion of a single crystal is formed while heat loss is still limited while intercepting the radiation with the members (1, 9). A cylindrical body of the single crystal is pulled by the shaft (8) which also lifts the members (1, 9 ).

REFERENCES:
patent: 4465545 (1984-08-01), Feigelson et al.
patent: 4609425 (1986-09-01), Mateika et al.
patent: 4894206 (1990-01-01), Yamashita et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5290395 (1994-03-01), Matsumoto et al.

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