Czochralski growing apparatus suppressing growth striation of lo

Details Czochralski growing apparatus suppressing growth striation of lo Czochralski growing apparatus suppressing growth striation of lo

1996-11-22

1998-10-27

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

117 30, 117 32, 117917, C30B 3500

Patent

active

058273662

ABSTRACT:
In a Czochralski monocrystalline silicon growing apparatus for growing a silicon monocrystalline by pulling up a crystal seed by a wire in a growing furnace, a magnetic ring is mounted on the silicon monocrystal, and an electromagnet is fixed to the growing furnace for pulling up the magnetic ring.

REFERENCES:
patent: 5009865 (1991-04-01), Boden et al.
patent: 5258092 (1993-11-01), Yamagishi et al.
K.M. Kim et al., "Maximum Length of Large Diameter Czochralski Silicon Single Crystals at Fracture Stress Limit of Seed", Journal of Crystal Growth, vol. 100, 1990, pp. 527-528.

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