Czochralski crystal pulling process and an apparatus for carryin

Details Czochralski crystal pulling process and an apparatus for carryin Czochralski crystal pulling process and an apparatus for carryin

1993-06-03

1994-11-15

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117208, C30B 1512

Patent

active

053637950

ABSTRACT:
A Czochralski crystal pulling apparatus for carrying out the Czochralski crystal pulling process is provided with a reflecting plate for reflecting radiation heat radiated from the surface of a molten material contained in a crucible toward a contact region of the surface of the molten material contiguous with the wall of the crucible to heat the molten material in the contact region so that the temperature of the molten material in the contact region may be prevented to reach the solidifying point. The reflecting plate is suspended by wires from cross beams so that the radiation heat transfer from the surface of a crystal toward a surrounding radiation heat transfer surface of a furnace may not be intercepted. The surface of the molten material is maintained on a level above the upper end of a high temperature region of a heater so that the surface of the molten material may be kept in comparatively low temperature to promote the crystal growth rate.

REFERENCES:
patent: 3342559 (1967-09-01), Dermatis
patent: 4330362 (1982-05-01), Zulehner
patent: 4911780 (1990-03-01), Morioka et al.
patent: 4957713 (1990-09-01), Kraretsky et al.
patent: 5009863 (1991-04-01), Shima et al.
patent: 5139750 (1992-08-01), Shima et al.

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