Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1998-06-12
1999-11-02
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 30, 117214, C30B 1504
Patent
active
059762454
ABSTRACT:
A Czochralski crystal growing system includes components for adding dopants to semiconductor materials and for growing single crystals. The components comprise a portion formed of a material that is chemically compatible with the semiconductor material. The portion includes a cavity sized to contain a desired amount of dopant. The cavity protects the dopant from exposure to contaminants, gas flows and heat in crystal growing furnaces. The portion is dipped into a melt to release the dopant. The portion can be a seed crystal which can further be used to grow a single crystal from the melt after doping. The components can include separate first and second portions formed of materials that are chemically compatible with the melt so that the portions can be placed into the melt. At least one of the first and second portions can contain a dopant. The second portion can be a seed crystal for growing a single crystal. The first portion can act as a heat sink to reduce temperature gradients between the melt and the seed crystal, so as to reduce the generation of dislocations in the seed crystal. The Czochralski crystal growing system also provides components for growing single crystals which may optionally not contain a dopant for adding to a melt. These components can comprise a seed crystal and a heat sink that controls heat transfer from the melt to the seed crystal to pre-heat the seed crystal in a controlled manner.
REFERENCES:
patent: 4040890 (1977-08-01), Burrus, Jr. et al.
patent: 5406905 (1995-04-01), Yemane-Berhane et al.
patent: 5700321 (1997-12-01), Niikura
Chen Kin-Chan
Kunemund Robert
SEH America Inc.
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