Cyclotron resonance chemical vapor deposition method of forming

Details Cyclotron resonance chemical vapor deposition method of forming Cyclotron resonance chemical vapor deposition method of forming

1990-02-16

1992-09-08

Beck, Shrive

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 39, 427 457, 427 47, 427249, 427122, 427 451, 423446, 428408, 118723, B05D 306

Patent

active

051457113

ABSTRACT:
Diamond films or i-carbon films can be formed on a surface by virtue of cyclotron resonance chemical vapor deposition. The characteristics such as transmissivity, conductivity and hardness of the films can be easily controlled by introducing a halogen into the films.

REFERENCES:
patent: 4663183 (1987-05-01), Ovshinsky et al.
patent: 4816289 (1989-03-01), Hirose
Kawarada et al., "Large Area Chemical Vapor Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma", Japanese Journal of Applied Physics, vol. 26, No. 6, Jun., 1987, pp. LL1032-LL1034.

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