Cyclosilazane polymers as dielectric films in integrated circuit

Fishing – trapping – and vermin destroying

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427387, 528 28, 528 37, 428446, 428447, 437238, B05D 512

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047191252

ABSTRACT:
An improved method is presented for the deposition of dielectric films in the fabrication of integrated circuits (ICs), wherein a solution of polymers derived from cyclosilazanes is employed to deposit dielectric films on semiconductor substrates by the spin-on technique. These spin-on films planarize (smooth out) underlying substrate topography and therefore are especially advantageous in multilevel metallization processes where they allow a highly uniform and continuous deposition of a subsequent layer of metallization resulting in improved yield and reliability of ICs.

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