CVD thin film compounds

Details CVD thin film compounds CVD thin film compounds

1990-06-06

1992-04-14

Beck, Shrive

Coating processes

Electrical product produced

Metallic compound coating

4272551, 4272552, 4272553, 106 105, C23C 1640, C23C 1646

Patent

active

051046903

ABSTRACT:
A stream of gaseous source compounds and their ranges of relative ratios useful in the deposition of thin film ferroelectric materials by CVD are disclosed. The stream of gaseous source compounds are used in combination with a CVD reactor flushed with an inert gas and maintained at a predetermined internal pressure and, a substrate disposed within the CVD reactor and maintained at a predetermined temperature. The steam of gaseous source compounds include a Zr source compound, a Ti source compound, a Pb source compound, an oxidizing agent compound, and an inert gas, as well as their ranges of relative ratios to deposit lead-zirconate-titanate, related ferroelectrics, specifically including lead-lanthanum-zirconium-titanate.

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