CVD temperature control

Details CVD temperature control CVD temperature control

1985-08-05

1986-12-30

Bueker, Richard

Coating apparatus

With indicating, testing, inspecting, or measuring means

118725, C23C 1304

Patent

active

046320563

ABSTRACT:
Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.

REFERENCES:
patent: 4223048 (1980-09-01), Engle, Jr.
patent: 4503807 (1985-03-01), Nakayama et al.
W. Walter, "Alloying Ohmic Contacts into GaAs Structures", IBM Tech. Discl. Bul., vol. 14, No. 6, Nov. 1971.

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