CVD reactor with uniform layer depositing ability

Details CVD reactor with uniform layer depositing ability CVD reactor with uniform layer depositing ability

1993-11-19

1994-08-09

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118715, 118725, C23C 1600

Patent

active

053363272

ABSTRACT:
A CVD reactor with a flat generally rectangularly shaped susceptor having a leading edge including a curve which is concave in the direction of gas flow through the reactor. The reactor produces epitaxial layers on semiconductor wafers in which the uniformity of the layer is dependent upon the radius of the concave curvature.

REFERENCES:
patent: 5077875 (1992-01-01), Hoke
patent: 5221556 (1993-06-01), Hawkins
patent: 5261960 (1993-11-01), Ozias

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