CVD reactor vessel for forming a solid state electronic device

Details CVD reactor vessel for forming a solid state electronic device CVD reactor vessel for forming a solid state electronic device

1990-11-06

1991-12-10

Beck, Shrive

Coating apparatus

Gas or vapor deposition

118724, C23C 1600

Patent

active

050708147

ABSTRACT:
A CVD reactor vessel for forming a solid state electronic device comprising (a) a reaction zone laterally separated from a first zone, (b) support means for supporting a substrate in said reaction zone, (c) heating means for heating both said first zone and said reaction zone, (d) first supply means for supplying at least one first reactant into a gas stream flowing from said first zone to said reaction zone, and (e) second supplying means for supplying at least one second reactant into said gas stream between said first zone and said reaction zone, said second supply means including an injection tube extending through said first zone to a location between said first zone and said reaction zone, said injection tube having a widened outlet so that the flow velocity of said second reactant more closely matching the flow velocity of said gas stream, wherein said substrate receives a layer of material such as cadmium mercury telluride formed from said reactants.

REFERENCES:
patent: 4220488 (1980-09-01), Duchemin et al.

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