Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1996-08-07
1999-04-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118725, 118728, C23C 1600
Patent
active
058912517
ABSTRACT:
A CVD reactor includes separate reaction and pressure chambers, where the reaction chamber is contained within and isolates process gases from the pressure chamber. In this manner, each of the chambers may be designed specifically for its intended purpose. The pressure chamber is of a bell-jar shaped designed to sustain a low-pressure environment. The reaction chamber is of a parallel-plate shaped designed for optimized process gas flow. The reaction chamber is isolated from the pressure chamber such that process gases present in the reaction chamber are separated from and cannot come into contact with the inner surface of the bell jar. In this manner, process gases do not deposit on the walls of the pressure chamber. In one embodiment, the wafer is heated by induction coils external to the process chamber. In this manner, the heat transferred to the wafer is not dependent upon the thickness of deposition layers formed on the walls of the reaction chamber.
REFERENCES:
patent: 5088444 (1992-02-01), Ohmine
patent: 5232508 (1993-08-01), Arena
patent: 5242501 (1993-09-01), McDiarmid
patent: 5244500 (1993-09-01), Ebata
patent: 5370738 (1994-12-01), Watanabe
patent: 5421890 (1995-06-01), Kita
MacLeish Joseph H.
Mailho Robert D.
Bueker Richard
MacPherson Alan H.
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