CVD reactor apparatus

Coating apparatus – Condition responsive control

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Details

118712, 118715, 118725, 118728, 118729, C23C 1600

Patent

active

055742475

ABSTRACT:
A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.

REFERENCES:
patent: 4932358 (1990-06-01), Studley
patent: 5000113 (1991-03-01), Wang
patent: 5063031 (1991-11-01), Sato
patent: 5094885 (1992-03-01), Selbrede
patent: 5108792 (1992-04-01), Anderson
patent: 5292393 (1994-03-01), Maydan
patent: 5292554 (1994-03-01), Sinha
patent: 5302209 (1994-04-01), Maeda
patent: 5317656 (1994-05-01), Moslehi
patent: 5332442 (1994-07-01), Kubodera
patent: 5338363 (1994-08-01), Kawata
Conference Proceedings of Advanced Metallization of ULSI Applications (1991, NJ and Tokyo; MRS), pp. 167-172 and 249-253 (see Specification p. 5).
Journal of Electrochemical Society, vol. 131 (1984), pp. 1427-1433, "Selective Low Pressure Chemical Vapor Deposition of Tungsten" (See Specification p. 3).
"CVD Technique for VLSI", Report of the first Symposium of the ECS, Japan, 1988, pp. 48-65 (see specification p. 3).
"Integrated Processing for Microelectronics Science and Technology", IBM Journal of Research and Development, vol. 36(2), 1992, p. 233 (see Specification p. 4).
Hitchman, Chemical Vapor Deposition, Principles and Applications, Academic Press, N.Y. .COPYRGT.1993, pp. 112-119.
Hitchman, Chemical Vapor Deposition Principles and Applications, Academic Press, N.Y. .COPYRGT.1993 pp. 32-35.

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