Coating apparatus – Gas or vapor deposition – With treating means
Patent
1987-10-27
1989-05-30
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118728, 118730, C23C 1600
Patent
active
048340227
ABSTRACT:
A CVD reactor has a unique geometry to control the thickness of a film formed on the surface of a substrate. The reactor is approximately cylindrical in shape. The base of the reactor is inclined at an angle of approximately 3.degree.-5.degree. from the vertical and has a central platform with a recessed well. The substrate is placed in the well so that the surface of the substrate on which the film is deposited does not protrude above the platform surface. The reactant gases are mixed in a region adjacent the cylindrical wall of the reactor and flow radially inward across the wafer surface. The thickness of the deposited film is controlled by contouring a plate positioned opposite the wafer surface so that the distance between the wafer surface and the plate, and hence the deposition rate, is controlled.
REFERENCES:
patent: 3633537 (1972-01-01), Howe
patent: 3696779 (1972-10-01), Murai
patent: 3750620 (1973-07-01), Eversteijn
patent: 3757733 (1973-09-01), Reinberg
patent: 3783822 (1974-01-01), Wolam
patent: 3922467 (1975-11-01), Pinchon
patent: 4058430 (1977-11-01), Suntola
patent: 4142004 (1979-02-01), Hauser
patent: 4282267 (1981-08-01), Kuyel
patent: 4596208 (1986-06-01), Wolfsn
patent: 4599135 (1986-06-01), Tsunekawa
Bueker Richard
Focus Semiconductor Systems, Inc.
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