CVD reaction chamber

Details CVD reaction chamber CVD reaction chamber

1984-11-05

1986-06-24

Plantz, Bernard F.

Coating apparatus

With indicating, testing, inspecting, or measuring means

118724, 118725, 118730, 118500, 118733, 219 1049R, 219 1067, C23C 1646

Patent

active

045962081

ABSTRACT:
An improved reaction chamber for CVD is disclosed that combines the advantageous features of the known horizontal and vertical designs while minimizing their respective short comings. The improved reaction chamber essentially comprises a vertical, double-walled reaction tube having a tapered top provided with a concentric gas inlet, a cooled base plate supporting the reaction tube and provided with a gas outlet, and a tapered susceptor operatively supported within the reaction tube, in close proximity to its tapered top and defining an angle therebetween. This angle varies from zero to about nineteen degrees and preferably is between ten to seventeen degrees. Preferably, the susceptor is rotatably and replaceably supported by a hollow rod, axially accommodating therein a thermocouple for monitoring the temperature within the reaction tube. The tapered top of the reaction tube can be shaped like a cone or like a pyramid with planar side surfaces.

REFERENCES:
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3365336 (1968-01-01), Folkmann et al.
patent: 3690290 (1972-09-01), Jarvela et al.
patent: 3885061 (1975-05-01), Corboy et al.
patent: 4147571 (1979-04-01), Stringfellow et al.
patent: 4468283 (1984-08-01), Ahmed
patent: 4522149 (1985-06-01), Garbis
Czorny "Epitaxy-A Versatile Tech. for Integrated Circuits" RCA Engineer, vol. 13, No. 3, Oct.-Nov. 1967, pp. 28-32.
P. Daniel Dapkus, "Metalorganic Chemical Vapor Deposition," Ann. Rev. Mater. Sci. 1982, 12: 243-269.

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