CVD Raw Material for oxide-system dielectric thin film and capac

Details CVD Raw Material for oxide-system dielectric thin film and capac CVD Raw Material for oxide-system dielectric thin film and capac

1995-01-03

1996-09-10

Hoang, Tu

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

501136, 252 623BT, 338225D, H01G 410

Patent

active

055551548

ABSTRACT:
The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

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