CVD process of forming hydrogenated a-Si films

Details CVD process of forming hydrogenated a-Si films CVD process of forming hydrogenated a-Si films

1995-06-07

1996-11-19

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272551, 427 74, 427578, 427573, 427574, 430128, 148DIG1, C23C 1600, B05D 306

Patent

active

055760600

ABSTRACT:
A CVD process of forming a hydrogenated amorphous silicon film comprising not more than 40 atomic percent of hydrogen atoms is disclosed, which comprises introducing a silicon-containing gas and a gas containing impurity for controlling conductivity of said film into a film-forming space, wherein the concentration of the gas containing the impurity is controlled during film formation to vary the content of the impurity in the thickness direction of the amorphous silicon film.

REFERENCES:
patent: 3949119 (1976-04-01), Shewchun et al.
patent: 4100310 (1978-07-01), Ura et al.
Brodsky et al, Appl. Phys. Lett. vol. 30, No. 11, Jun. 1977, pp. 561-563.
D. A. Anderson et al, The Royal Photographic Society of Great Britain, Paper B14, "Amorphous Silicon as Photoconductor", Symposium, Sep. 1976.

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