CVD process for forming a thin film

Details CVD process for forming a thin film CVD process for forming a thin film

2008-09-02

2008-09-02

Meeks, Timothy (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

C427S252000, C427S345000, C427S352000

Reexamination Certificate

active

11075880

ABSTRACT:
The present invention is a CVD process for forming a thin film which includes a step of recovering an organometallic compound component from an exhaust gas which has been conventionally discarded, and a purifying step of purifying the recovered organometallic compound to thereby eliminate a by-product formed in a film forming step by CVD. According to this process, the organometallic compound is recycled. As a recovering technique, any of the followings is employed: a technique in which the exhaust gas is cooled and is recovered as a recovered content; a technique in which the exhaust gas is brought into contact with a solvent to dissolve the organometallic compound in the solvent; and a technique in which the exhaust gas is brought into contact with an adsorbent to thereby adsorb the organometallic compound. A purifying technique is selected depending on the recovering technique or the properties of the recovered content, and any of a technique of distilling the recovered content, a technique of sublimating the recovered content, and a technique of heating the adsorbent to desorb the organometallic compound is employed. These CVD thin film processes can recover and purify the organometallic compound in a higher yield by adding a step of eliminating oxygen from the exhaust gas prior to the recovering step.

REFERENCES:
patent: 3356527 (1967-12-01), Moshier et al.
patent: 5144049 (1992-09-01), Norman et al.
patent: 5211758 (1993-05-01), Ota
patent: 5250323 (1993-10-01), Miyazaki
patent: 6216708 (2001-04-01), Agarwal
patent: 6884463 (2005-04-01), Kitada et al.
Hawley's Condensed Chemical Dictionary, 11thEdition, 1987, p. 1080.

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