CVD process for deposition of amorphous silicon

Details CVD process for deposition of amorphous silicon CVD process for deposition of amorphous silicon

1994-11-23

1997-02-18

Nguyen, Nam

Fishing, trapping, and vermin destroying

437233, 427585, 427587, 427588, H01L 2120

Patent

active

056041527

ABSTRACT:
A novel process for depositing amorphous silicon has been described. The process features the homogeneous reaction of, decomposition of SiH2 and deposition of amorphous silicon, in a horizontal LPCVD reaction chamber. The SiH2 is produced by initially breaking down SiH4 in a heated autoclave apparatus, and then transferring the SiH2 to the LPCVD system through heated feed lines. This homogeneous process results in excellent thickness and resistivity uniformity for wafers placed along the horizontal axis of the LPCVD chamber.

REFERENCES:
"The LPCVD Polysilicon Phosphorous Doped in situ as an Industrial Process" by A. Baudrant et al. in J. Electrochem. Soc. Solid State Sci & Tech, May 1982, pp. 1109-1115.
"Kinetics and Mechanism of Amorphous Hydrogenated Silicon By Homogeneous Chemical Vapor Deposition" by B. A. Scott et al., in Applied Physics Letters, Jul. 1981.
Scott et al. in Jr. De Physique, College, C4, Oct. 1981, pp. C4, 635-638.

Affiliated with

Also associated with

Rating

CVD process for deposition of amorphous silicon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD process for deposition of amorphous silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD process for deposition of amorphous silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1602142