CVD precursors and film preparation method using the same

Details CVD precursors and film preparation method using the same CVD precursors and film preparation method using the same

1998-03-26

1999-09-14

Meeks, Timothy

Coating processes

Coating by vapor, gas, or smoke

Metal coating

4272551, 4272552, 4272553, C23C 1618

Patent

active

059520477

ABSTRACT:
A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In particular, when the main compound has the structural formula Ma(DPM).sub.2 (Ma being representing an alkaline earth metal), Ma(TMOD).sub.2 or Ma(TMND).sub.2 is blended therewith.

REFERENCES:
patent: 5090985 (1992-02-01), Soubeyrand et al.

Affiliated with

Also associated with

Rating

CVD precursors and film preparation method using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD precursors and film preparation method using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD precursors and film preparation method using the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1508310