CVD oxide coding method for ultra-high density mask read-only-me

Details CVD oxide coding method for ultra-high density mask read-only-me CVD oxide coding method for ultra-high density mask read-only-me

1994-12-27

1997-01-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437 48, H01L 218246

Patent

active

055977537

ABSTRACT:
An improved Read-Only-Memory (ROM) structure and a method of manufacturing said ROM device structure having an ultra-high-density of coded ROM cells, was achieved. The array of programmed ROM cells are composed of a single field effect transistor (FET) in each ROM cell. The improved ROM process utilizes the patterning of a ROM code insulating layer over each coded FET (cell) that is selected to remain in an off-state (nonconducting) when a gate voltage is applied. The remaining FETs (cells) have a thin gate oxide which switch to the on-state (conducting) when a gate voltage is applied. The thick ROM code insulating layer eliminates the need to code the FETs in the ROM memory cells by conventional high dose ion implantation. This eliminated the counter-doping of the buried bit lines by the implantation allowing for much tighter ground rules for the spacing between buried bit line. The elimination of the implant also reduces substantially the stand-by leakage current that is so important in battery operated electronic equipment, such as lap-top computers. The gate capacitance of the off-state cells is also substantially reduced because of the thick insulating layer, thereby reducing the RC time delay in the word lines and improving circuit performance.

REFERENCES:
patent: 5081052 (1992-01-01), Kobayashi
patent: 5091328 (1992-02-01), Miller
patent: 5117389 (1992-05-01), Yiu
patent: 5153146 (1992-10-01), Toyoshima
patent: 5429974 (1995-07-01), Hsue

Affiliated with

Also associated with

Rating

CVD oxide coding method for ultra-high density mask read-only-me does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD oxide coding method for ultra-high density mask read-only-me, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD oxide coding method for ultra-high density mask read-only-me will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-941158