CVD of PtRh with good adhesion and morphology

Details CVD of PtRh with good adhesion and morphology CVD of PtRh with good adhesion and morphology

2005-07-19

2005-07-19

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S088000, C117S104000, C117S937000, C117S938000, C438S584000

Reexamination Certificate

active

06918960

ABSTRACT:
A method and system for performing metal-organic chemical vapor deposition (MOCVD). The method introduces a metal-organic compound into the CVD chamber in the presence of a first reactant selected to have a reducing chemistry and then, subsequently, a second reactant selected to have an oxidizing chemistry. The reducing chemistry results in deposition of metal species having a reduced surface mobility creating more uniform coverage and better adhesion. The oxidizing species results in deposition of metal species having a greater surface mobility leading to greater surface agglomeration and faster growth. By alternating the two reacts, faster growth is achieved and uniformity of the metal structure is enhanced.

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