CVD method for semiconductor manufacture using rapid thermal pul

Details CVD method for semiconductor manufacture using rapid thermal pul CVD method for semiconductor manufacture using rapid thermal pul

1992-02-10

1993-07-13

Maples, John S.

Fishing, trapping, and vermin destroying

437200, 437245, 437248, H01L 21283, H01L 21324

Patent

active

052273318

ABSTRACT:
A method of CVD deposition for semiconductor manufacture especially suited to the conformal deposition of a film into a semiconductor structure having deep wells and channels. The method includes directing rapid thermal pulses at the semiconductor structure. The thermal pulses heat the semiconductor structure and deposition gas stream to an optimal deposition temperature range. In between the thermal pulses the semiconductor structure and deposition gas stream cool and allow diffusion of the deposition gas stream into the recesses of the semiconductor structure. A frequency of the thermal pulses is from 1 to 100 Hz.

REFERENCES:
patent: 4632713 (1986-12-01), Tiku
patent: 4672414 (1987-06-01), Gabriel
patent: 5011789 (1991-04-01), Burns

Affiliated with

Also associated with

Rating

CVD method for semiconductor manufacture using rapid thermal pul does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD method for semiconductor manufacture using rapid thermal pul, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD method for semiconductor manufacture using rapid thermal pul will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2311728