CVD method for forming silicon nitride film

Details CVD method for forming silicon nitride film CVD method for forming silicon nitride film

2004-05-21

2008-12-09

Chen, Bret (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255394

Reexamination Certificate

active

07462376

ABSTRACT:
A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.

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Liu, Xuejian, et al., “Chemical vapor deposition of silicon nitride thin films from tris(diethylamino)chlorosilane”. Materials Letters vol. 59, Issue 1, Jan. 2005, pp. 11-14.

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