CVD method for forming oxide-system dielectric thin film

Details CVD method for forming oxide-system dielectric thin film CVD method for forming oxide-system dielectric thin film

1998-07-09

2000-08-15

Brunsman, David

Compositions: coating or plastic

Coating or plastic compositions

Heavy metal compound containing

10628724, 501137, C23C 1640

Patent

active

061030023

ABSTRACT:
The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

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