Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1996-07-02
2000-05-16
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
42725531, 42725536, 427 81, C23C 1640
Patent
active
06063443&
ABSTRACT:
The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.
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Kinouchi Shin-ichi
Matsuno Shigeru
Uchikawa Fusaoki
Watarai Hisao
King Roy V.
Mitsubishi Denki & Kabushiki Kaisha
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