Coating processes – Coating by vapor – gas – or smoke – Metal coating
Patent
1997-08-21
1999-02-23
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Metal coating
4272481, 427255, 4272551, 4272552, 427124, 4271261, 427 99, C23C 1600
Patent
active
058741313
ABSTRACT:
A method of forming a film on a substrate using Group III metal complexes, including Group IIIA metals and Group IIIB metals, which include the lanthanides. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
REFERENCES:
patent: 5151305 (1992-09-01), Matsumoto et al.
patent: 5492725 (1996-02-01), Gordon
patent: 5552181 (1996-09-01), Kondoh et al.
Brown et al., "Diazabutadiene (DAB) Complexes of Aluminum. A New Mode of Coordination for a DAB Ligand", Inorganic Chem., 34, 6415-6416 (1995).
Brown et al., "Gallium-Containing 6.pi.-Electron Ring Systems", J. Am. Chem. Soc., 117, 5421-5422 (1995).
Cloke et al., "Electronic Structure and Photoelectron Spectroscopy of Al(Me.sub.3 CNCHCHNCMe.sub.3).sub.2 and Ga(Me.sub.3 CNCHCHNCMe.sub.3).sub.2 ", J. Chem Soc., Dalton Transactions, 2, 181-184 (1991).
Cloke et al., "Homoleptic Diazadiene Complexes of Titanium, Yttrium, and Some Lanthanoid Elements", J. Chem. Soc., Chem. Commun., pp. 1344-1345 (1986).
Cloke et al., "Paramagnetic Aluminium-1,4-Di-t-butyl-1,4-diazabutadiene (dbdab( Complexes Derived from Metal Vapours and/or Metal Hydrides: No. 20, 1394-1396 (1990).
Cloke et al., "Synthesis and X-Ray Crystal Structure of the First Homoleptic Main Group Diazadiene Complex, Bis(1,4-di-t-butyl-1,4-diazabutta-1,3-diene)gallium", J. Chem. Soc., Chem. Commun., No. 15, 1002-1003 (1989).
Gluz et al., "Five-and Six-Membered Nonclassical 4.pi.--Electron Heterocyclic Compounds Containing Boron and Aluminum: Quantum-Chemical Study", Russian J. Org. Chem., 31(3), 426-430 (1995).
Hara et al., "Stress in Al-Sc Interconnection Layers", Jpn. J. Appl. Phys., 32, 1394-1396 (1993).
Henderson, "Reactions of Gallium Hydrides with 1,4-Di-t-butyl-1,4-diazabutadiene: Subvalent and Hydrometallation Products", J. Chem. Soc., Chem. Commun., No. 17, 1203-1204 (1990).
Kaim et al., "Bis(1,4-di-tert-butyl-1,4-diazabutadiene)gallium is not a Gallium(.parallel.) Compound", J. Chem. Soc., Chem. Commun., No. 8, 597-598 (1991).
N. Kaltsoyannis, "Covalency in metal complexes of 1,4-diazabutadiene (dab). A density functional investigation of the electronic structures of (dab)!", J. Chem. Soc., Dalton Transactions, 8, 1583-1589 (1996).
H. Kobayashi et al., "Electronic transfer between ligands in the tris(2,2'--bipyridine) complexes consisting of monoanion radicals", Molecular Physics, 78, 909-928 (1993).
P. Scott et al., "Synthesis, Structure and Electrochemistry of a Paramagnetic (1,4-Diazabutadiene) Thorium Complex", J. Chem. Soc., Chem. Commun., No. 5, 579-580 (1995).
S. Takayama, "Effects of Y or Gd addition on the structures and resistivities of A1 thin films", J. Vac. Sci. Technol., 14, 2499-2504 (1996).
V. Versteeg, "Metalorganic Chemical Vapor Deposition by Pulsed Liquid Injection Using an Ultrasonic Nozzle: Titanium Dioxide on Sapphire from Titanium (IV) Isopropoxide", J. Amer. Cer. Soc., 78, 2763-2768 (1995).
Vaartstra Brian A.
Wanner Brenda D.
King Roy V.
Micro)n Technology, Inc.
LandOfFree
CVD method for forming metal-containing films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CVD method for forming metal-containing films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD method for forming metal-containing films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-304657