CVD method for forming metal boride films using metal borane clu

Details CVD method for forming metal boride films using metal borane clu CVD method for forming metal boride films using metal borane clu

1991-07-29

1994-01-11

King, Roy

Coating processes

Coating by vapor, gas, or smoke

4272551, 4272552, 4271261, 427314, 423287, 423286, C23C 1600

Patent

active

052779327

ABSTRACT:
Metal or metal boride films are deposited by CVD using a metal borane cluster compound as a precursor. For a nickel film, NiCl.sub.2 is vaporized in a reactor tube in the presence of B.sub.10 H.sub.14 or another polyborane. For an aluminum film, Al(BH.sub.4).sub.3 is formed by reacting AlCl.sub.3 with NaBH.sub.4, and using the Al(BH.sub.4).sub.3 as a precursor borane cluster compound. The substrate is heated to a selected temperature so that the deposited film has a controlled stoichiometry of metal and boron.

REFERENCES:
patent: 4668538 (1987-05-01), Feichtner et al.
Wayda et al., "Low-temperature deposition of zirconium and hafnium boride films by thermal decomposition of the metal borohydrides (M[BH.sub.4 ].sub.4)", Appl. Phys. Lett. 53(5), Aug. 1988 pp. 361-363.
Jensen et al., "Titanium, Zirconium, and Hafnium tetrahydroborates as Tailored CVD precursors for metal diboride thin films", J. Am. Chem. Soc. 1988, 110 pp. 1643.varies.1644.
Marks et al., "Covalent Transition Metal, Lanthanide, and Actinide Tetrahydroborate Complexes", Chem. Rev. 1977, pp. 263-293.
William N. Lipscomb, Boron Hydrides, W. A. Benjamin, Inc. 1963 pp. V-7.
Earl L. Muetterties, Boron Hydride Chemistry, Academic Press 1975 pp. V-19.
Earl L. Muetterties and Walter K. Knotch, Polyhedral Boranes, Marcel Dekker, Inc. 1968 pp. V-55.

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