CVD method for depositing a layer on an electrically conductive

Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition

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427250, 427253, 4272551, 427591, 427593, 427586, B05D 302, B05D 314, B05D 306, C23C 1600

Patent

active

051642220

DESCRIPTION:

BRIEF SUMMARY
TECHNICAL FIELD

The present invention relates to a method for depositing a layer of a given material onto an electrically conductive thin layer structure arranged on a substrate. Preferred embodiments employ the thermally induced reaction of a compound supplying said given material, which compound is in the vapor state or absorbed or deposited on the surface of the substrate. Such methods are known as chemical vapor deposition (CVD) methods. The invention also comprises an apparatus for carrying out such method.


BACKGROUND

It is known to produce a thin layer from a given material by the thermally induced deposition from the gaseous phase, with or without the thermally induced reaction of a compound in the vapor state to supply the given material. The chemical reaction may be a simple thermal decomposition or a reduction or any other suitable reaction. Such methods, known as CVD methods, recently acquired significance in the direct manufacturing of thin layer metal patterns, such as electric conductor structures on substrates, such as integrated circuit chips, etc., wherein the onset of the chemical reaction and thereby the definition of the metal pattern is performed by a laser beam focused onto the surface of the substrate. In a known "Direct-writing"-Laser-CVD Method (I. G. Black et al, Appl. Phys. Lett. 50 (15), Apr. 13, 1987, pp. 1016-1018), the pattern is deposited by the reduction of tungsten hexafluoride with hydrogen, whereupon metallic tungsten and hydrofluoric acid are formed.
It is frequently desired that such thin layer metallic structures, manufactured by direct-writing laser CVD methods or by other means, be reinforced, that is, the thickness of the metallic structures (counted perpendicularly with respect to the surface of the substrate) be reinforced by additional material, which additional material may be the same material as has been used in the primary layer structure or some other material. A similar objective may also occur for non-metallic, electrically conductive structures.


SUMMARY OF THE INVENTION

The present invention solves this problem by providing that the electrically conductive structure to be reinforced (the conductor structure) is subjected to heating by an electrical current passed therethrough in the presence of a vapor-phase chemical compound which, during a thermally induced chemical reaction, will supply the desired additional material to be deposited.
As a result of this selective and practically exclusive heating of the conductor structure by the Joule heat produced therein, a very well-defined deposit of the additional material settles exclusively onto the heated structure.
The heating occurs preferably as a result of a current passed through the electrically conductive structure to be reinforced, which current is sufficient to heat it and is applied to the conductive structure through electrodes placed thereon. The heating can be performed also by inductive means, such as by inducing a high frequency current therein.
The current flow occurs preferably in a pulsed fashion, whereby the conducting structure to be reinforced heats up very quickly and there is little time left for heat transfer to the substrate. Similar considerations apply also to inductive heating.
The gas atmosphere which, during the heating of the metallic or conductive structure by the current, is in contact therewith, preferably comprises a mixture of WF.sub.6 and H.sub.2, however, other types of gas atmospheres could be used, such as, WCl.sub.6 /H.sub.2, W(CO).sub.6, W(PF.sub.3).sub.6, etc. Regarding the deposition of tungsten by CVD, see, for example, the article of C. E. Morosanu et al, Thin solid Films, 52 )1978) 181-194.)


BRIEF DESCRIPTION OF THE DRAWINGS

The invention will now be described in a more detailed exemplary manner with reference to the drawings, which relate to a preferred application in which an electrically conductive structure is reinforced by metal.
FIG. 1 illustrates in a simplified fashion a portion of an apparatus for making metal patterns by means of a laser-CVD;

REFERENCES:
patent: 2763576 (1953-09-01), Belitz et al.
patent: 3167449 (1965-01-01), Spacil
patent: 4183320 (1980-01-01), Erben et al.
patent: 4239819 (1980-12-01), Holzl
patent: 4349408 (1982-09-01), Tarng et al.
patent: 4756927 (1988-07-01), Black et al.
patent: 4794019 (1988-12-01), Miller
patent: 4810526 (1989-03-01), Ito et al.
patent: 4849260 (1989-07-01), Kusumoto et al.
Black et al, "Supplemental multilevel interconnects by laser direct writing . . " Appl Phys Lett, 50(15), Apr. 13, 1987 pp. 1016-1018.

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