CVD method and apparatus therefor

Details CVD method and apparatus therefor CVD method and apparatus therefor

1994-02-24

1997-09-23

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, C23C 1600

Patent

active

056699760

ABSTRACT:
A CVD method including the steps of: setting a semiconductor wafer on a heating stage within a CVD reaction chamber; and emitting CVD reaction gas towards at least the central major region of the wafer from a first gas blowing region of a gas head provided opposing the wafer and having a plurality of gas blowing regions separated from each other, and simultaneously emitting inert gas towards the peripheral region of the wafer from a second gas blowing region of the gas head, while maintaining the temperature of the wafer at a predetermined temperature, and while maintaining the pressure of the CVD reaction chamber within a range from 100 Torr to atmospheric pressure; whereby a CVD film of high quality can be formed in uniform thickness on the wafer, and the consumed amount of reaction gas and the amount of undesirable precipitated particles can be reduced.

REFERENCES:
patent: 3854443 (1974-12-01), Baerg
patent: 4625678 (1986-12-01), Shioya
patent: 4771730 (1988-09-01), Tezuka
patent: 4989541 (1991-02-01), Mikoshiba
patent: 4993358 (1991-02-01), Mahawili
patent: 5000113 (1991-03-01), Wang
Webster's New Collegiate Dictionary .COPYRGT.1975, G&C Merriam Co., Springfield, Mass. p. 853.

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