Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1994-11-04
1996-08-13
King, Roy V.
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272551, 4272552, 4272555, 118715, 118729, C23C 1600
Patent
active
055454364
ABSTRACT:
A CVD system for accomplishing deposition of a silicon oxide film on a wafer which is moved in a predetermined direction, under a reaction between an organic Si source and O.sub.3. The CVD system comprises a gas injector having a first slit for ejecting a gas containing O.sub.3, a second slit for ejecting a gas which is inert to a reaction between the organic Si source and O.sub.3, a third slit for ejecting a gas containing the organic Si source, a fourth slit for ejecting a gas which is inert to the reaction, a fifth slit for ejecting a gas containing the organic Si source, a sixth slit for ejecting a gas which is inert to the reaction, and a seventh slit for ejecting a gas containing O.sub.3. Additionally, the first to seventh slits are arranged in the order named in the predetermined wafer moving direction. This CVD system improves the characteristics and quality of silicon oxide film deposited on the wafer while lowering a so-called substrate dependency of the deposited film.
REFERENCES:
patent: 4892753 (1990-01-01), Wang et al.
patent: 5288325 (1994-02-01), Gomi
patent: 5403630 (1995-04-01), Matsui et al.
King Roy V.
Sony Corporation
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