CVD lateral epitaxial growth of silicon over insulators

Details CVD lateral epitaxial growth of silicon over insulators CVD lateral epitaxial growth of silicon over insulators

1983-08-12

1985-06-11

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29578, 148174, 148DIG25, 148DIG26, 148DIG50, 156610, 156612, 156613, 156614, 427 86, H01L 21205, H01L 2176

Patent

active

045226628

ABSTRACT:
A method for growing Silicon On Insulator (SOI) films using only conventional very large scale integration (VLSI) techniques is provided. By sequentially varying the flow of HCL gas during the vertical-growth, lateral-overgrowth, coalescence, and planarization stages of the epitaxial deposition process allows the formation of high-quality SOI films on wider oxide stripes suitable for general transistor applications.

REFERENCES:
patent: 3511702 (1970-05-01), Jackson et al.
patent: 3653991 (1972-04-01), Sirtl et al.
patent: 3661636 (1972-05-01), Green et al.
patent: 3746908 (1973-07-01), Engeler
patent: 3943622 (1976-03-01), Kim et al.
patent: 4210470 (1980-07-01), Marinace
patent: 4346513 (1982-08-01), Nishizawa et al.
Druminski et al, "Selective Etching & Epitaxial Refilling . . . SiH.sub.4 /HCl/H.sub.2 ", J. Crystal Growth, 31 (1975) pp. 312-316.
Runyan et al., "Behavior of Large-Scale Surface . . . Silicon Epitaxial Growth", J. Electrochem. Soc., vol. 114, No. 11, Nov. 1967, pp. 1154-1158.

Affiliated with

Also associated with

Rating

CVD lateral epitaxial growth of silicon over insulators does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD lateral epitaxial growth of silicon over insulators, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD lateral epitaxial growth of silicon over insulators will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1181356