CVD heater control circuit

Details CVD heater control circuit CVD heater control circuit

1985-08-06

1986-08-26

Pianalto, Bernard D.

Coating apparatus

Control means responsive to a randomly occurring sensed...

Temperature responsive

118 501, 118724, B05C 1100

Patent

active

046075917

ABSTRACT:
Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.

REFERENCES:
patent: 4223048 (1980-09-01), Engle

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