CVD heat source

Details CVD heat source CVD heat source

1985-08-05

1987-02-03

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118723, C23C 1304

Patent

active

046402241

ABSTRACT:
Chemical vapor deposition on a semiconductor wafer is obtained in a plasma reactor having a plurality of lamps for radiantly heating the wafer. Calibrated temperature sensing means remote from the wafer is used to control the heating of the wafer. Gases are supplied by way of a plurality of tubes extending radially inwardly from the sides of the chamber. A baffle is provided to form an antechamber which aids in the uniformity of the deposition. The plasma is ignited for less than the whole deposition cycle for deposition of tungsten disilicide.

REFERENCES:
patent: 3623712 (1971-11-01), McNeilly
patent: 4101759 (1978-07-01), Anthony
patent: 4298629 (1981-11-01), Nozaki
patent: 4504730 (1985-03-01), Shimizu

Affiliated with

Also associated with

Rating

CVD heat source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD heat source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD heat source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1086554