CVD film forming method in which a film formation preventing gas

Details CVD film forming method in which a film formation preventing gas CVD film forming method in which a film formation preventing gas

1998-07-09

2000-04-04

Meeks, Timothy

Coating processes

Coating by vapor, gas, or smoke

42725523, 438680, C23C 1604

Patent

active

060458623

ABSTRACT:
A CVD film forming apparatus includes a susceptor, provided in a process chamber, having a surface of an area smaller than that of a wafer. A process gas is supplied to a top surface of the wafer mounted on the susceptor, thereby forming a CVD film on the top surface. A film formation preventing gas is supplied in a direction from the rear surface of the wafer toward a peripheral edge thereof at a flow rate which prevents the process gas from flowing to the rear surface of the wafer.

REFERENCES:
patent: 5133284 (1992-07-01), Thomas et al.
patent: 5326725 (1994-07-01), Sherstinsky et al.
patent: 5447570 (1995-09-01), Schmitz et al.

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