Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1994-09-14
1996-01-02
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 89, 118724, C30B 2508
Patent
active
054798744
ABSTRACT:
A filament reactor for producing diamond using chemical vapor deposition (CVD) techniques. The reactor includes a closed reaction chamber with at least one gas inlet and at least one exhaust port, two substrates disposed in the reaction chamber, and a resistance heating device in the form of a plurality of filaments positioned between the substrates. A preheater unit is located adjacent to the gas inlet for heating the gas mixture entering the reaction chamber. By preheating the gas mixture, the temperature of the substrates and the concentration of the hydrocarbon species fluxes are kept relatively uniform, thus ensuring high quality diamonds of uniform thicknesses. The preheater unit can be a serpentine tube made of a metal having a high thermal conductivity and wrapped with a resistance heating element.
REFERENCES:
patent: 3580732 (1971-05-01), Blakeslee et al.
patent: 4953499 (1990-09-01), Anthony et al.
patent: 4970986 (1990-11-01), Anthony et al.
Breneman R. Bruce
Garrett Felisa
General Electric Company
Webb II Paul R.
LandOfFree
CVD diamond production using preheating does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CVD diamond production using preheating, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD diamond production using preheating will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-229209