CVD diamond or diamond-like carbon for chemical-mechanical polis

Fishing – trapping – and vermin destroying

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437228, 437190, 156636, 156645, H01L 21302

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active

052468844

ABSTRACT:
Metallized semiconductor chips, such as are intended for VLSI, are coated with a first layer of SiO2 followed by a second layer of CVD diamond or DLC as an etch stop. The resulting structure is reproducibly and controllably planarized using a chem-mech slurry and an appropriate polishing pad, enabling subsequent layers to be built up similarly.

REFERENCES:
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4944836 (1990-07-01), Beyer et al.
W. E. Mutter, "Choice Stop Material for Chemical/Mechanical Planarization," IBM Tech. Disc. Bull., vol. 27, No. 8, Jan. 1985, pp. 4642.
A. Sawabe et al., "Growth of Diamond Thin Films by Electron-Assisted CVD and Their Characterization," Thin Solid Films, vol. 137, 1986 pp. 89-99.
Y. Hirose et al., "Synthesis of Diamond Thin Films by CVD Using Organic Compounds," J. Journal of Applied Phys., vol. 25, pt. 2, No. 6, 1986 pp. L519-L521.
K. D. Beyer et al, "Glass Planarization by Stop-Etch Polishing" IBM Tech. Disc. Bull., vol. 27, No. 8, Jan. 1985, p. 4700.
Research Disclosure, RD-326,035A Jun. 10, 1991 "Planarization of Rough Surfaces--Using SOG and CMP".

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