Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1997-04-29
2000-12-26
Mills, Gregory
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
216 59, 216 60, 216 80, H01L 21302
Patent
active
061642959
ABSTRACT:
There is provided a CVD apparatus and a cleaning method which can precisely perform cleaning at a high speed, in order to increase the throughput of a CVD apparatus. A film formation gas (e.g., SiH.sub.4 and O.sub.2 gases) is introduced from a source gas supply pipe into a chamber to form a silicon oxide film (SiO.sub.2) on a wafer placed on a susceptor by using a plasma or the like. A thin film (SiO.sub.2) mainly consisting of silicon and oxygen, an imperfect oxide film of silicon, or the like also attaches to a wall surface and the respective surfaces of a window plate, a vacuum seal portion, the susceptor, an electrode, an insulator, an exhaust pipe, and the like in the chamber. An HF-based gas supply system for a cleaning etching gas is arranged to clean the interior of the chamber of the CVD apparatus. Particularly, a film formed with a source gas of Si.sub.x H.sub.2x+2 (x=1, 2, 3) and O.sub.2 is more perfect than an imperfect oxide film (e.g., TEOS) formed with an organic silicon source gas, so that bonding is strong, and the etching rate decreases in plasma cleaning and the like. Cleaning with the HF gas according to this invention is very effective.
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Onishi et al.; "A Mechanism of Particle Generation and a Method to Suppress Particles in Vapor HF/H.sub.2 O System" Abstract of the 22nd (1990 International) Conference of Solid State Devices and Materials, Sendai, 1990, pp. 1127-1130.
Hayasaka Nobuo
Kaji Naruhiko
Miyajima Hideshi
Ui Akio
Goudreau George
Kabushiki Kaisha Toshiba
Mills Gregory
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