CVD apparatus for Cu formation

Details CVD apparatus for Cu formation CVD apparatus for Cu formation

1998-03-17

2000-03-21

Tentoni, Leo B.

Coating apparatus

Gas or vapor deposition

118726, C23C 1606, C23C 1618

Patent

active

060398086

ABSTRACT:
In a CVD apparatus for Cu formation using as a raw material, a mixture of a solvent and a liquid raw material including Cu(HFA) and adducted molecules or a solid raw material including Cu(HFA) and adducted molecules, a fluorinated organic polymer contained, a fluorinated metal, an insulator or a Ti compound is provided on a surface of a member at a portion where the raw material exists.

REFERENCES:
patent: 5009963 (1991-04-01), Ohmi et al.
patent: 5622565 (1997-04-01), Ye et al.
"CVD of Copper from Copper (II) . . . " E. Eisenbraun et al. Advanced Metallization for ULSI Applications, pp. 107-113 (1992).
"Chemical Additives for Improved Copper . . . " Arthur K. Hochberg et al., Advanced Metallization for ULSI Applications in 1994, pp. 79-87.
"Interconnection Process Employing Damascene Method" H. Shibata, Semiconductor World (monthly issued), Dec. 1995, pp. 179-184.

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