CVD apparatus and CVD method

Details CVD apparatus and CVD method CVD apparatus and CVD method

1998-06-05

2000-07-18

Aftergut, Jeff H.

Coating apparatus

Gas or vapor deposition

With treating means

118722, 118723MP, 118728, 118733, C23C 1600

Patent

active

06089184&

ABSTRACT:
The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

REFERENCES:
patent: 5015503 (1991-05-01), Varrin Jr., et al.
patent: 5534069 (1996-07-01), Kuwabara et al.
patent: 5595606 (1997-01-01), Fujikawa et al.

Affiliated with

Also associated with

Rating

CVD apparatus and CVD method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CVD apparatus and CVD method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CVD apparatus and CVD method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2025635