Coating apparatus – Gas or vapor deposition – With treating means
Patent
1986-03-03
1987-03-24
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118719, 118728, C23C 1308
Patent
active
046516735
ABSTRACT:
A chemical vapor deposition epitaxial reactor (10) comprised of a quartz tube (12) with banks of IR lamp proximate the outside surface thereof. A splitter plate (30) located at the inlet of the tube (12) separates reactive gases and nonreactive gases directed longitudinally into the tube. The nonreactive gases, directed along the inside surface of the tube (12), substantially prevents unwanted reactant deposition on the inside surface of the tube (12).
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patent: 3699298 (1972-10-01), Briody
patent: 4033286 (1977-07-01), Chern et al.
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Hammond, "Silicon Epitaxy", Solid State Technology, Nov. 1978, pp. 68-75.
"Apparatus for the Deposition of Silicon Nitride" by R. A. Whitner, published in the West Electric Company, Inc. Technical Digest No. 11, Jul. 1968 at pp. 5 and 6.
AT&T - Technologies, Inc.
Bueker Richard
Levy R. B.
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