CVD apparatus

Details CVD apparatus CVD apparatus

2005-05-17

2005-05-17

Hassanzadel, P. (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C156S345430

Reexamination Certificate

active

06892669

ABSTRACT:
A CVD apparatus produces plasma to generate radicals and uses the radicals, silane, and the like so as to deposit films on substrates in a vacuum vessel12.The vacuum vessel has a partitioning wall section14for separating the inside thereof into a plasma-generating space15and a film deposition process space16.The partitioning wall section has a plurality of through-holes25and diffusion holes26.An interior space24receives the silane or the like fed into the film deposition process space through diffusion holes16.The radicals produced in the plasma-generating space are fed into the plasma-generating space through the through-holes. The through-holes satisfy the condition of uL/D>1, where u represents the gas flow velocity in the through-holes, L represents the effective length of the through-holes, and D represents the inter-diffusion coefficient.

REFERENCES:
patent: 4792378 (1988-12-01), Rose et al.
patent: 5336326 (1994-08-01), Karner et al.
patent: 5433786 (1995-07-01), Hu et al.
patent: 5433787 (1995-07-01), Suzuki
patent: 5449410 (1995-09-01), Chang
patent: 5472565 (1995-12-01), Mundt et al.
patent: 5525159 (1996-06-01), Hama et al.
patent: 5556474 (1996-09-01), Otani et al.
patent: 5624498 (1997-04-01), Lee et al.
patent: 5766364 (1998-06-01), Ishida et al.
patent: 5863339 (1999-01-01), Usami
patent: 5942075 (1999-08-01), Nagahata et al.
patent: 6026764 (2000-02-01), Hwang
patent: 6074518 (2000-06-01), Imafuku et al.
patent: 6086677 (2000-07-01), Umotoy et al.
patent: 6203620 (2001-03-01), Moslehi
patent: 6245192 (2001-06-01), Dhindsa et al.
patent: 6245396 (2001-06-01), Nogami
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6368987 (2002-04-01), Kopacz et al.
patent: 6435428 (2002-08-01), Kim et al.
patent: 5-21393 (1993-01-01), None
patent: 6-260434 (1994-09-01), None
patent: 7-201749 (1995-08-01), None
patent: 8-167596 (1996-06-01), None
patent: 2837087 (1998-10-01), None
Robert C. Reid et al. “Lennard-Jones Potentials as Determined from Viscosity Data (Appendix B)”,The Properties of Gases and Liquids, McGraw-Hill, Inc., Copyright 1987, p. 734, Index.
R. Byron Bird et al. “Diffusivity and the Mechanisms of Mass Transport; Theory of Ordinary Diffusion in Gases at Low Density”,Transport Phenomena, John Wiley & Sons, Inc., Copyright 1960, p. 508-513.
“Flow of Atoms and Molecules—Rarefied Gas Dynamics and its Applications”, section 2.6.4, The Japan Society of Mechanical Engineers, 1996, Kyoritsu Shuppan Co., Ltd.
Shingo Kadomura et al., Anisotropic Etching Using Deposition of Sulfur, Sony Corporation, Semiconductor World, Jan. 1993, pp. 1-11, and translation.
Ken Fujita et al., “X-Ray Photoelectron Spectroscopic Studies on Pyrolysis of Plasma- Polymerized Fluorocarbon Films on SI”, Jpn. J. Appl. Phys. vol. 34 (1995), pp. 304-306, Part 1, No. 1, Jan. 1995.
Riccardo d'Agostino et al., “Plasma Etching of Si and SiO2in SF6-O2Mixtures”, J. Appl. Phys. 52(1), Jan. 1981, pp. 162-167.
A new technique for diagnostics of a radio-frequency parallel-plate remote plasma; N. Sano et al.; Appl. Phys. Lett 65 (2), Jul. 11, 1994 pp. 162-164.
Infrared spectroscopic study of SiOxfilms produced by plasma enhanced chemical vapor deposition; J. Vac.Sci. Technol. A4(3), May/Jun. 1986; pp. 689-694.
Improvement of structural and electrical properties in low-temperature gate oxides for poly-Si TFTs by controlling O2/Sih4ratios; AM-LCD 1997; pp. 87-90.
“Lennard-Jones Potentials as Determined from Viscosity Data (Appendix B)”,The Properties of Gases and Liquids, McGraw-Hill, Inc., Copyright 1987, p. 734.
“Diffusivity and the Mechanisms of Mass Transport; Theory of Ordinary Diffusion in Gases at Low Density”,Transport Phenomena, John Wiley & Sons, Inc., Copyright 1960, p. 508-511.

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