CVD apparatus

Details CVD apparatus CVD apparatus

1993-05-13

1995-04-18

Chaudhuri, Olik

Coating apparatus

Gas or vapor deposition

With treating means

118728, C23C 1600

Patent

active

054074860

ABSTRACT:
A CVD apparatus for growing a compound semiconductor film with a desired composition ratio on a wafer includes a heat source for supplying heat to a source gas flowing over the wafer so that a temperature gradient of the source gas is cancelled. The heat source may be a susceptor having a hollow part so that the heat capacity of the susceptor varies from the upstream part to the downstream part of the source gas flow. In this structure, the decomposition ratio of the source gas is uniform over the wafer surface whereby the uniformity of the composition distribution in the film grown on the wafer is improved, increasing production yield.

REFERENCES:
patent: 2452197 (1948-10-01), Kennedy
patent: 3689726 (1972-09-01), Howell
patent: 3858548 (1975-01-01), Tick
patent: 4711989 (1987-12-01), Yu
patent: 4901670 (1990-02-01), Ahlgren
patent: 5074954 (1991-12-01), Nishizawa
Bass et al, "Metal Organic Vapour Phase Epitaxy of Indium Phosphide", Journal of Crystal Growth, vol. 64, 1983, pp. 68-75.

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