Cutting thin layer(s) from semiconductor material(s)

Details Cutting thin layer(s) from semiconductor material(s) Cutting thin layer(s) from semiconductor material(s)

2007-01-30

2007-01-30

Ho, Tu-Tu (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S463000, C257SE21596, C257SE21599, C216S083000, C216S087000

Reexamination Certificate

active

11140910

ABSTRACT:
An apparatus for cutting at least one thin layer from a substrate or ingot forming element for an electronic or optoelectronic or optical component or sensor. This apparatus includes a device for directing a pulse of energy into the substrate or forming element wherein the pulse has a duration shorter than or of the same order as that needed by a sound wave to pass through the thickness of the weakened zone, and the energy of the pulse is sufficient to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein. The apparatus also includes an assembly for holding or orienting the substrate or ingot forming element so that the energy pulse is completely uniformly directed over the entire surface, through the face and into the substrate or ingot forming element to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5928533 (1999-07-01), Benea et al.
patent: 6013563 (2000-01-01), Henley et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6113707 (2000-09-01), Benea et al.
patent: 2001/0026997 (2001-10-01), Henley et al.
patent: 0 792 731 (1997-09-01), None
patent: 0 925 888 (1999-06-01), None
patent: 0 961 312 (1999-12-01), None
patent: 1 014 452 (2000-06-01), None
patent: 2 666 759 (1992-03-01), None
patent: 11312811 (1999-11-01), None
patent: 1324525 (1992-05-01), None
patent: WO 99/44242 (1999-02-01), None
patent: WO 00/26000 (2000-05-01), None
patent: WO 00/61841 (2000-10-01), None
Kiriakopoulos et al., “Experimental and theoretical
umerical investigations of thin lins bonding strength,” Theoretical and Applied Fracture Mechanics, vol. 31, No. 1, pp. 4759 (1999).
Derwent Display Form indicating WO 99/44242 and EP 1014452 to be equivalent documents.

Affiliated with

Also associated with

Rating

Cutting thin layer(s) from semiconductor material(s) does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cutting thin layer(s) from semiconductor material(s), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cutting thin layer(s) from semiconductor material(s) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3794707