Cutting thin layer(s) from semiconductor material(s)

Semiconductor device manufacturing: process – Semiconductor substrate dicing

Reexamination Certificate

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Reexamination Certificate

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06951799

ABSTRACT:
A method of cutting at least one thin layer from a substrate or ingot forming element for an electronic or optoelectronic or optical component or sensor. This method includes the steps of forming a weakened zone in the substrate or ingot forming element, wherein the weakened zone has a thickness that corresponds to that of the layer that is to be removed; and directing a pulse of energy into the substrate or forming element wherein the pulse has a duration shorter than or of the same order as that needed by a sound wave to pass through the thickness of the weakened zone. The energy of the pulse is sufficient to cause cleavage to take place in the weakened zone as the energy of the pulse is absorbed therein.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5928533 (1999-07-01), Benea et al.
patent: 6013563 (2000-01-01), Henley et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6113707 (2000-09-01), Benea et al.
patent: 0 792 731 (1997-09-01), None
patent: 0 925 888 (1999-06-01), None
patent: 0 961 312 (1999-12-01), None
patent: 1 014 452 (2000-06-01), None
patent: 2 666 759 (1992-03-01), None
patent: 11312811 (1999-11-01), None
patent: 1324525 (1992-05-01), None
patent: WO99/44242 (1999-02-01), None
patent: WO 00/26000 (2000-05-01), None
patent: WO 00/61841 (2002-10-01), None
Derwent Display Form indicating WO99/44242 and EP 1014452 to be equivalent doccuments.
Kiriakopoulos et al., XP-001031851 “Experimental and thoretica
umerical investigations of thisn films bonding strength”, Theoretical and Applied Fracture Mechanics, vol. 31, No. 1, pp 47-59 (1999).

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