Cutting method and method of manufacturing semiconductor device

Details Cutting method and method of manufacturing semiconductor device Cutting method and method of manufacturing semiconductor device

2006-06-06

2006-06-06

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including contaminant removal or mitigation

C438S113000, C438S110000, C438S111000, C438S112000, C438S464000, C438S460000

Reexamination Certificate

active

07056768

ABSTRACT:
A cutting method for separating individual semiconductor devices by cutting boundary portions in a group of semiconductor devices made up by arranging a plurality of semiconductor devices in which a ductile first layer and a second layer are stacked on a peripheral side thereof, the cutting method comprises a cutting step of cutting the first and second layers by moving a first rotary body from the boundary portions of the group of semiconductor devices in the direction in which the first and second layers are stacked; and a burr removal step of removing burrs from the first layer by moving a second rotary body, softer than the first rotary body and wider than the first rotary body in the direction of rotational axis, from the cut boundary portions of the group of semiconductor devices in the direction in which the first and second layers are stacked.

REFERENCES:
patent: 6841414 (2005-01-01), Hu et al.
patent: 2001-077055 (2001-03-01), None

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