Cutting method and apparatus for ingot, wafer, and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

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Details

C117S015000, C117S020000, C083S014000

Reexamination Certificate

active

07351282

ABSTRACT:
Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot10is implanted ion beam23to generate lattice defects in a direction defined by the crystal axes that corresponds to the cleavage plane. Cleavage is generated by applying a shock by a knife edge to the position of the lattice having a cutting face as a cleavage plane. Production time of waters is reduced with a more numbers of sliced wafers from one ingot.

REFERENCES:
patent: 5279077 (1994-01-01), Miyashita et al.
patent: 5792566 (1998-08-01), Young et al.
patent: 5875769 (1999-03-01), Toyama et al.
patent: 2005-14241 (2005-01-01), None
patent: 2006-245498 (2006-06-01), None

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