Cutting method and apparatus for ingot, wafer, and...

Details Cutting method and apparatus for ingot, wafer, and... Cutting method and apparatus for ingot, wafer, and...

2008-04-01

2008-04-01

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S015000, C117S020000, C083S014000

Reexamination Certificate

active

07351282

ABSTRACT:
Cutting method of ingot into wafers along cleavage plane. Onto surface of single crystal ingot10is implanted ion beam23to generate lattice defects in a direction defined by the crystal axes that corresponds to the cleavage plane. Cleavage is generated by applying a shock by a knife edge to the position of the lattice having a cutting face as a cleavage plane. Production time of waters is reduced with a more numbers of sliced wafers from one ingot.

REFERENCES:
patent: 5279077 (1994-01-01), Miyashita et al.
patent: 5792566 (1998-08-01), Young et al.
patent: 5875769 (1999-03-01), Toyama et al.
patent: 2005-14241 (2005-01-01), None
patent: 2006-245498 (2006-06-01), None

Affiliated with

Also associated with

Rating

Cutting method and apparatus for ingot, wafer, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cutting method and apparatus for ingot, wafer, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cutting method and apparatus for ingot, wafer, and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2795322